Download Advances in Photovoltaics: Part 2 by Gerhard P. Willeke, Eicke R. Weber PDF

By Gerhard P. Willeke, Eicke R. Weber

ISBN-10: 0123813433

ISBN-13: 9780123813435

Semiconductors and Semimetals has extraordinary itself throughout the cautious collection of famous authors, editors, and participants. initially widely recognized because the ''Willardson and Beer'' sequence, it has succeeded in publishing a number of landmark volumes and chapters. The sequence publishes well timed, hugely correct volumes meant for long term influence and reflecting the actually interdisciplinary nature of the sphere. The volumes in Semiconductors and Semimetals were and should stay of serious curiosity to physicists, chemists, fabrics scientists, and equipment engineers in academia, medical laboratories and sleek undefined. This quantity is the second of a collection of seven relating to photovoltaics.

Written and edited by means of across the world well known experts
Relevant to a large readership: physicists, chemists, fabrics scientists, and machine engineers in academia, clinical laboratories and sleek

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This indicates that also grain boundaries lead to a locally increased current flow. The characteristic of the base-collector junction of an industrially fabricated npn transistor (E), where the diode edge is lying well passivated below an oxide layer, showed an ideal shape with an ideality factor of 1 over the whole bias range. 25), leading to two J eff 0 -values for each diode size. Also the reverse conductance Gp (the inverse of Rp, in units of S/mm2) was measured at about À1 V for each cell fraction.

Therefore, a good spatial correlation exists between the density of type-2 breakdown sites and the crystal defect density, which becomes visible, for example, by forward bias EL imaging. It has also been found that the density of type-2 breakdown sites is significantly increased in cell regions, where the material has been facing the walls of the silicon casting crucible, as it is shown in Fig. 20. Here the upper and the right edge of the wafer were facing to the crucible walls during crystallization.

For investigating the physical nature of this current, its temperature dependence was measured. In Fig. , 2006b), the result is shown as log(I) over 1/T1/4. It is visible that, in a wide temperature range from À50 to þ100  C, log(I) is proportional to 1/ T1/4. This special temperature dependence is typical for variable range hopping conduction in a constant density of states near the Fermi level according to Mott’s theory (1990). This type of conduction has been observed regularly for highly disturbed semiconductors and insulators, like nano- and microcrystalline silicon layers (Myong and Lim, 2006).

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