By G. W. A. Dummer, J. Mackenzie Robertson
American Microelectronics information Annual 1964-65 presents finished info on various microelectronics to be had within the U.S.
summary: American Microelectronics info Annual 1964-65 presents entire info on varied microelectronics on hand within the U.S
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Additional resources for American microelectronics data annual. 1964-65
80 20 ,, ,, ,• / ....... 00 ....... ,- ... ---- � 5 z ...... ---- i'-... ,. "ii 60 / LEFT AND BELOW : t WATT RESISTOR DERATING CURVES. 0 v; ...... ,, m XI ,, r � m I � :::l ... 25 -- -- -- DERATING CURVE WATTS DISSIPATION CURVE 0 0 2 I 4 I I RESISTORS PER PLATE I \ 100 Manufacturer. Centralab , The Electronic s Division of Globe- Union Inc . , 900 E. Keefe Avenue , Milwaukee 1 , Wi sconsin. I ONE RESISTOR PER PLATE \ 80 \ \ 60 0 9 fa .... 0 < \ < "' 0 w .... z l'j ffi 20 IL 0 50 20 60 AMBIENT TEMPERATURE 80 - C0 \ 1z w u "' w IL 100 \ \ \ 120 RESISTOR PROPERTIES (Contd) .
Lbe master active wafer, being a standard available product, ls used as the basis of the completed circuit. e onlywork nec essary to complete the circuit are three major steps as listed below: Transistor Contact Opening Aluminum at least 99. 99% pure is thermally evaporated from anincondescent tungsten fil ament and deposited to a thickness of 5, 000 Angstroms over the surface of the wafer. Photo-resist is then applied, exposed with the proper Interconnection mask, developed, and the desired conductorpattern is etched In the evaporated aluminum.
Elgbt standard Transistor Contact Positions 32 BENDIX MONOLITHIC MICROCIRCUITS FIGURE 5, NAND Circuit Layout Drawing 33 Continued. CIRCUITS - BENDIX (Contd) . micromintaturized integrated circuitry provides nu merous degrees of freedom to the design engineer in the integrated circuit field and offer s many distlnet advantages. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. wide resistance ranges low parasitic capacitance active and passive fabrication independanee independance of transistor and resistor characteristics resistor tolerances temperature stability low leakage between resistor and bulk 12.